advanced power n-channel enhancement mode electronics corp. power mosfet lower on- resistance bv dss 30v simple drive requirement r ds(on) 4m fast switching characteristic i d 75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.3 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice thermal data parameter total power dissipation 96 -55 to 150 200901063 1 operating junction temperature range -55 to 150 linear derating factor 0.7 storage temperature range continuous drain current, v gs @10v 63 pulsed drain current 1 350 gate-source voltage + 20 continuous drain current, v gs @10v 3 75 ap90t03gr rohs-compliant product parameter rating drain-source voltage 30 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-262(r)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 4 m ? v gs =4.5v, i d =30a - - 6 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 3 v g fs forward transconductance v ds =10v, i d =30a - 55 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v ,v gs =0v - - 250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 60 96 nc q gs gate-source charge v ds =24v - 8.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 38 - nc t d(on) turn-on delay time 2 v ds =15v - 14 - ns t r rise time i d =30a - 83 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 66 - ns t f fall time r d =0.5 - 120 - ns c iss input capacitance v gs =0v - 4090 6540 pf c oss output capacitance v ds =25v - 1010 - pf c rss reverse transfer capacitance f=1.0mhz - 890 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =45a, v gs =0v - - 1.3 v trr reverse recovery time 2 i s =30a, v gs =0v, - 51 - ns qrr reverse recovery charge di/dt=100a/s - 63 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 75a, calculated continuous current based on maximum allowable junction temperature is 125a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap90t03gr
ap90t03g r fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 140 160 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 5 10 15 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v sd , source-to-drain voltage (v) is (a) t j =25 o c t j =150 o c 0 40 80 120 160 200 0123 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 0.5 1 1.5 2 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 3.0 4.0 5.0 6.0 246810 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =20a t c =25 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap90t03gr t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =24v i d =40a 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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